Processing Development and Surface Preparation Review. Nanoscale Selective-Area GaAs Growth by Nitrogen Surface Passivation and STM Surface Modification.
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چکیده
منابع مشابه
Growth and surface passivation of near-surface InGaAs quantum wells
The growth and surface passivation of near-surface InGaAs quantum wells (QWs) on GaAs (1 1 0) substrate have been investigated. Triangular shaped small islands, approximate areal density of 10 cm , are observed on metal organic vapor phase epitaxially grown GaAs single layer and InGaAs multi-quantum wells (MQWs) surfaces in a wide range of growth temperatures. By optimizing the growth condition...
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Preparation of High Surface Area ZrO2 Nanoparticles
In comparison to the previous researches, ZrO2 nanoparticles with higher surface area (85 m2/g) have been synthesized in this research. The as-prepared ZrO2 nanoparticles by co-precipitation method were characterized with X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The surface area of the s...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1996
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.39.603